Our technology takes diamond, one of the world's best electrical insulators, and turns it at will into a controllable conductor.

Using proprietary surface engineering techniques we embed tens of thousands of nano-scale electron guns into a diamond substrate that fire electrons into the diamond. Once in the diamond these then travel through the material with mobilities in excess of twice that of silicon.

This yields devices that exhibit the superior high voltage and high frequency switching properties of a thermionic valve but with diamond replacing the vacuum.

Evince plans to launch it's first product a 10kV, 25-50A fast recovery diode in Q4 2010. This will initially be available as a raw die product suitable for integration into silicon IGBT's. This will be followed up in 2011 with the launch of its EFET (Electron Field Emission Transistor) device.